Integrated fan-out package including dielectric waveguide

ABSTRACT

A semiconductor structure and a method are disclosed herein. The semiconductor structure includes a dielectric waveguide vertically disposed between a first layer and a second layer, a driver die configured to generate, at a first output node, a driving signal, a first transmission electrode located along a first side of the dielectric waveguide and configured to receive the driving signal from the first output node, a first receiver electrode located along the first side of the dielectric waveguide, and a receiver die configured to receive a received signal from the first receiver electrode.

REFERENCE TO RELATED APPLICATION

This application is a continuation-in-part of U.S. application Ser. No.14/483,247 filed on Sep. 11, 2014, the contents of which areincorporated by reference in their entirety.

BACKGROUND

Integrated optical waveguides are often used as components in integratedoptical circuits, which integrate multiple photonic functions.Integrated optical waveguides are used to confine and guide light from afirst point on an integrated chip (IC) to a second point on the IC withminimal attenuation. Generally, integrated optical waveguides providefunctionality for signals imposed on optical wavelengths in the visiblespectrum.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A is a schematic diagram of a semiconductor structure inaccordance with some embodiments of the present disclosure;

FIG. 1B is a three-dimensional (3D) view of the semiconductor structureas illustrated in FIG. 1A, in accordance with some embodiments of thepresent disclosure.

FIG. 2 is a side view of a semiconductor structure in accordance withsome other embodiments of the present disclosure;

FIG. 3 is a top-view of the semiconductor structure as illustrated inFIG. 2 in accordance with some embodiments of the present disclosure;

FIG. 4 is a flowchart illustrating a method 400 of forming an IntegratedFan-Out (InFO) package including the semiconductor structure asillustrated in FIG. 1A, in accordance with some embodiments of thepresent disclosure.

FIGS. 5-24 are cross sectional views of the Integrated Fan-Out (InFO)package, including the semiconductor structure as illustrated in FIG.1A, at different stages of a manufacturing process, in accordance withsome embodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

The terms used in this specification generally have their ordinarymeanings in the art and in the specific context where each term is used.The use of examples in this specification, including examples of anyterms discussed herein, is illustrative only, and in no way limits thescope and meaning of the disclosure or of any exemplified term.Likewise, the present disclosure is not limited to various embodimentsgiven in this specification.

Although the terms “first,” “second,” etc., may be used herein todescribe various elements, these elements should not be limited by theseterms. These terms are used to distinguish one element from another. Forexample, a first element could be termed a second element, and,similarly, a second element could be termed a first element, withoutdeparting from the scope of the embodiments. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In this document, the term “coupled” may also be termed as “electricallycoupled”, and the term “connected” may be termed as “electricallyconnected”. “Coupled” and “connected” may also be used to indicate thattwo or more elements cooperate or interact with each other.

FIG. 1A is a schematic diagram of a semiconductor structure 100 inaccordance with some embodiments of the present disclosure. FIG. 1B is athree-dimensional (3D) view of the semiconductor structure 100 asillustrated in FIG. 1A, in accordance with some embodiments of thepresent disclosure. As illustratively shown in FIG. 1A and FIG. 1B, thesemiconductor structure 100 includes a dielectric waveguide 101configured to convey a signal, a driver circuit 102, and a receivercircuit 112. In some embodiments, the signal conveyed through thedielectric waveguide 101 is a single ended signal. In some otherembodiments, the signal conveyed through the dielectric waveguide 101 isa differential signal.

In some embodiments, the driver circuit 102 is configured to receive aninput signal SIN, and output a transmission signal S1 at an output node1021. The transmission signal S1 is provided to a transmission couplingelement 105 by way of transmission lines 103. In some embodiments, thetransmission coupling element 105 includes a pair of metal structures,including, for example, micro-strips, disposed on opposing sides of thedielectric waveguide 101. For illustration, the transmission couplingelement 105 includes transmission electrodes 104 and 106 located onopposite sides of the dielectric waveguide 101. In some embodiments, thetransmission electrodes 104 and 106 are symmetric with respect to thedielectric waveguide 101. In some embodiments, the shapes and/orpatterns of the transmission electrodes 104 and 106 are mirror images.

For illustration in FIG. 1A, the transmission electrode 104 is locatedalong a first side, for example, the upper side, of the dielectricwaveguide 101. In some embodiments, the transmission electrode 104 isdisposed along a top surface of the dielectric waveguide 101 within ametal interconnect layer, and is configured to receive the transmissionsignal S1 from the driver circuit 102.

The transmission electrode 104 is connected to the driver circuit 102 byway of the transmission line 103, in which the transmission line 103provides for a wide bandwidth transmission of the transmission signal S1from the driver circuit 102 to the transmission electrode 104. In someembodiments, the transmission electrode 104 is included within thetransmission line 103.

The transmission electrode 106 is located along a second side, forexample, the lower side, of the dielectric waveguide 101. In someembodiments, the transmission electrode 106 is disposed along a bottomsurface of the dielectric waveguide 101 within another metalinterconnect layer, and is connected to a ground terminal 107 a.

The dielectric waveguide 101 is configured to transmit the transmissionsignal S1 to a receiver coupling element 109. The dielectric waveguide101 is disposed within the inter-level dielectric (ILD) material, andthe dielectric waveguide 101 includes a dielectric material having adielectric constant (or permittivity) that is larger than that of thesurrounding ILD material.

In some embodiments, the receiver coupling element 109 includes a pairof metal structures, including micro-strips, disposed on opposing sidesof the dielectric waveguide 101. For illustration, the receiver couplingelement 109 includes receiver electrodes 108 and 110 located on oppositesides of the dielectric waveguide 101. In some embodiments, the receiverelectrodes 108 and 110 are symmetric with respect to the dielectricwaveguide 101. In some embodiments, the shapes and/or patterns of thereceiver electrodes 108 and 110 are mirror images.

The receiver electrode 108 is located along the first side, for example,the upper side, of the dielectric waveguide 101. In some embodiments,the receiver electrode 108 is disposed along the top surface of thedielectric waveguide 101 within the metal interconnect layer where thetransmission electrode 104 is disposed, and is configured to receive thereceived signal S1′, which are equivalent to the transmission signal S1,from the dielectric waveguide 101. The receiver electrode 108 isconnected to the receiver circuit 112 by way of a transmission line 111.The transmission line 111 provides for a wide bandwidth transmission ofthe received signal S1′ from the receiver electrode 108 to the receivercircuit 112.

The receiver electrode 110 is located along the second side, forexample, the lower side, of the dielectric waveguide 101. In someembodiments, the receiver electrode 110 is disposed along the bottomsurface of the dielectric waveguide 101 within the metal interconnectlayer where the transmission electrode 106 is disposed, and is connectedto a ground terminal 107 b.

The first pair of metal structures is laterally separated from thesecond pair of metal structures by a space S so that the upperelectrodes, 104 and 108, and the lower electrodes, 106 and 110, arenon-continuous along a length of the dielectric waveguide 101. In someembodiments, the space S is on the order of microns to tens ofmillimeters.

In some embodiments, the receiver circuit 112 is configured to receivethe received signal S1′, and output an output signal SOUT at an outputnode 1121. The received signal S1′ is transmitted from the receivercoupling element 109 by way of the transmission lines 111.

The greater dielectric constant of the dielectric waveguide 101 causeselectromagnetic radiation introduced into the dielectric waveguide 101to be confined within the dielectric waveguide 101 by total internalreflection, so that the electromagnetic radiation is guided from thedriver circuit 102 to the receiver circuit 112. In some embodiments, thedielectric waveguide 101 includes silicon nitride (SiN) or siliconcarbide (SiC). In some embodiments, the dielectric waveguide 101includes room-temperature (e.g., 25° C.) liquid-phase high-K polymer,including, for example, polyimide (PI), polybenzoxazole (PBO), etc. Insome other embodiments, the dielectric waveguide 101 includesroom-temperature or low-temperature (e.g., below 250° C.) liquid-phaseSiO₂ or Spin on Glass (SOG), of which the dielectric constant is greaterthan or equal to approximately 4. In some other embodiments, thedielectric waveguide 101 includes liquid phase SiN or other high-Kdielectric. In some other embodiments, the dielectric waveguide 101includes low-temperature (e.g., 180° C.) chemical vapor deposited SiO₂(CVD-SiO₂), SiN_(x) or SiO_(x)N_(y) deposition, including, for example,atmospheric pressure CVD (APCVD), sub-atmospheric CVD (SACVD), plasmaenhanced CVD (PECVD), metal organic CVD (MOCVD), etc. In some otherembodiments, the dielectric waveguide 101 includes low-temperature(e.g., 210° C.) high-K dielectric deposition including, for example,ZrO₂—Al₂O₃—ZrO₂ (ZAZ) or other High-K dielectric deposition including,for example, ZrO₂, Al₂O₃, HfO_(x), HfSiO_(x), ZrTiO_(x), TiO₂, TaO_(x),etc. In some other embodiments, the dielectric waveguide 101 includeshybrid atomic layer deposited SrO (ALD-SrO) and chemical vapor depositedRuO₂ (CVD-RuO₂). For example, in some other embodiments, the dielectricwaveguide 101 includes a SrTiO₃ (STO) dielectric layer.

The aforementioned materials are given for illustrative purposes.Various materials of the dielectric waveguide 101 are within thecontemplated scoped of the present disclosure.

In some embodiments, the ILD material includes silicon dioxide (SiO₂).In other embodiments, the ILD material includes a low-k dielectricmaterial, including, for example, fluorine-doped silicon dioxide,carbon-doped silicon dioxide, porous silicon dioxide, or a similarmaterial.

FIG. 2 is a side view of the semiconductor structure 100 in accordancewith some embodiments of the present disclosure. In some embodiments,the dielectric waveguide 101 includes one or more tapered ends havingwidths w along direction 216 that gradually decrease. Alternativelystated, the widths decrease from a first width to a second narrowerwidth over a length along direction 218 of a transition region. Forexample, the dielectric waveguide 101 includes a first tapered end,having a width that decreases over a transition region 212, and a secondtapered end having a width that decreases over a transition region 214.

The tapered ends of the dielectric waveguide 101 are configured toincrease efficiency by which electromagnetic radiation is coupledbetween the electrode 104 and/or the electrode 108, and the dielectricwaveguide 101 by reducing the reflection of radiation between theelectrode 104 and/or the electrode 108, and the dielectric waveguide101. For illustration, the tapered transitional region changes the angleat which electromagnetic radiation interacts with sidewalls of thedielectric waveguide 101. Accordingly, the coupling of electromagneticradiation between the electrode 104 and/or the electrode 108, and thedielectric waveguide 101, is increased, because total internalreflection is a function of an angle at which electromagnetic radiationis incident upon a surface.

FIG. 3 is a top-view of the semiconductor structure as illustrated inFIG. 2 in accordance with some embodiments of the present disclosure.The semiconductor structure 100 illustratively shown in FIG. 3 includesintegrated dielectric waveguides 101 a-101 c configured to conveyelectromagnetic radiation in parallel.

In some embodiments, the semiconductor structure 100 includes dielectricwaveguides 101 a-101 c disposed between the driver circuit 102 and thereceiver circuit 112. In some embodiments, the dielectric waveguides 101a-101 c are physically arranged in parallel to one another. In someembodiments, the waveguides 101 a-101 c abut one another. In some otherembodiments, the dielectric waveguides 101 a-101 c are spatiallyseparated from one another.

The driver circuit 102 includes separate driver elements, 102 a-102 c,which are each configured to generate an electrical signal. Theelectrical signal is provided in parallel to the transmission electrodes104 a-104 c, which couple the electrical signal as electromagneticradiation into the dielectric waveguides 101 a-101 c, which convey thesignal in parallel. Since the electrical signals are transmitted inparallel, smaller amplitude signals are conveyed by each of thedielectric waveguides 101 a-101 c, thereby further decreasing lossbetween the transmission electrodes 104 a-104 c and the dielectricwaveguides 101 a-101 c. Alternatively stated, the smaller amplitudesignals output by the driver elements 102 a-102 c and received by thereceiver elements 112 a-112 c cause the transmission coupling elements105 and the receiver coupling elements 109 to experience less loss.

As illustratively shown in FIG. 3, in some embodiments, the electrodes104 a-104 c and/or the electrodes 108 a-108 c, also or alternativelyhave tapered widths, to further increase coupling efficiency between thetransmission coupling element 105 and/or the receiver coupling element109, and the dielectric waveguide 101. In such embodiments, theelectrodes 104 a-104 c and the electrodes 108 a-108 c, have widths thatdecrease over the transition regions, 312 and 314. In some embodiments,the tapered widths of the electrodes 104 a-104 c and the electrodes 108a-108 c, are different in length. Alternatively stated, the electrodes104 a-104 c and/or the electrodes 108 a-108 c have different sizedtransitional regions than the tapered widths of the dielectric waveguide101.

FIG. 4 is a flowchart illustrating a method 400 of forming an IntegratedFan-Out (InFO) package including the semiconductor structure 100 asillustrated in FIG. 1A, in accordance with some embodiments of thepresent disclosure. For better understanding of the present disclosure,the method 400 is discussed in relation to the semiconductor structure100 shown in FIGS. 1-3, but is not limited thereto.

For illustration, the manufacturing process of the semiconductorstructure 100 in FIGS. 1-3 is described by the method 400 together withFIGS. 5-24. FIGS. 5-24 are cross sectional views of the IntegratedFan-Out (InFO) package 500, including the semiconductor structure asillustrated in FIG. 1A, at different stages of a manufacturing process,in accordance with some embodiments of the present disclosure. AlthoughFIGS. 5-24 are described together with the method 400, it will beappreciated that the structures disclosed in FIGS. 5-24 are not limitedto the method 400. In some other embodiments, the Integrated Fan-Out(InFO) package 500 includes the semiconductor structure as illustratedin FIGS. 2-3.

While disclosed methods are illustrated and described herein as a seriesof acts or events, it will be appreciated that the illustrated orderingof such acts or events are not to be interpreted in a limiting sense.For example, some acts may occur in different orders and/or concurrentlywith other acts or events apart from those illustrated and/or describedherein. In addition, not all illustrated acts may be required toimplement one or more aspects or embodiments of the description herein.Further, one or more of the acts depicted herein may be carried out inone or more separate acts and/or phases.

With reference to the method 400 in FIG. 4, in operation 410, a carrier601, an adhesive layer 602, and a polymer base layer 603 are provided,as illustrated in FIG. 5.

In some embodiments, the carrier 601 includes glass, ceramic, or othersuitable material to provide structural support during the formation ofvarious features in device package. In some embodiments, the adhesivelayer 602, including, for example, a glue layer, a light-to-heatconversion (LTHC) coating, an ultraviolet (UV) film or the like, isdisposed over the carrier 601. The polymer base layer 603 is coated onthe carrier 601 via the adhesive layer 602. In some embodiments, thepolymer base layer 603 is formed of PolyBenzOxazole (PBO), AjinomotoBuildup Film (ABF), polyimide, BenzoCycloButene (BCB), Solder Resist(SR) film, Die-Attach Film (DAF), or the like, but the presentdisclosure is not limited thereto.

With reference to the method 400 in FIG. 4, in operation S420,subsequently, a backside redistribution layer (RDL) 604 is formed, asillustrated in FIG. 6. In some embodiments, RDL 604 includes conductivefeatures 6041, including, for example, conductive lines and/or vias,formed in one or more polymer layers. In some embodiments, the polymerlayers are formed of any suitable material, including PI, PBO, BCB,epoxy, silicone, acrylates, nano-filled pheno resin, siloxane, afluorinated polymer, polynorbornene, or the like, using any suitablemethod, including, for example, a spin-on coating technique, sputtering,and the like.

In some embodiments, the conductive features 6041 are formed in polymerlayers. The formation of such conductive features 6041 includespatterning polymer layers, for example, using a combination ofphotolithography and etching processes, and forming the conductivefeatures 6041 in the patterned polymer layers, for example, depositing aseed layer and using a mask layer to define the shape of the conductivefeatures 6041. The conductive features 6041 are designed to formfunctional circuits and input/output features for subsequently attacheddies.

Next, in operation S430, a patterned photoresist 605 is formed over thebackside RDL 604 and the carrier 601, as illustrated in FIG. 7. In someembodiments, for example, photoresist 605 is deposited as a blanketlayer over backside RDL 604. Next, portions of photoresist 605 areexposed using a photo mask (not shown). Exposed or unexposed portions ofphotoresist 605 are then removed depending on whether a negative orpositive resist is used. The resulting patterned photoresist 605includes openings 606 disposed at peripheral areas of the carrier 601.In some embodiments, the openings 606 further expose conductive features6041 in the backside RDL 604.

Next, in operation S440, a seed layer 607 is deposited overlying thepatterned photoresist 605, as illustrated in FIG. 8.

Next, in operation S450, the openings 606 are filled with a conductivematerial 608 including, for example, copper, silver, gold, and the liketo form conductive vias, as illustrated in FIG. 9. In some embodiments,the openings 606 are plated with the conductive material 608 during aplating process, including, for example, electro-chemically plating,electroless plating, or the like. In some embodiments, the conductivematerial 608 overfills the openings 606, and a grinding and a chemicalmechanical polishing (CMP) process are performed to remove excessportions of the conductive material 608 over the photoresist 605, asillustrated in FIG. 10.

Next, in operation S460, the photoresist 605 is removed, as illustratedin FIG. 11. In some embodiments, a plasma ashing or wet strip process isused to remove the photoresist 605. In some embodiments, the plasmaashing process is followed by a wet dip in a sulfuric acid (H2SO4)solution to clean the package 500 and remove remaining photoresistmaterial.

Thus, conductive vias 609 are formed over the backside RDL 604.Alternatively, in some embodiments, the conductive vias 609 are replacedwith conductive studs or conductive wires, including, for example,copper, gold, or silver wire. In some embodiments, the conductive vias609 are spaced apart from each other by openings 610, and at least oneopening 610 between adjacent conductive vias 609 is large enough todispose one or more semiconductor dies therein.

Next, in operation S470, a driver die 611A and a receiver die 611B aremounted and attached to the package 500, as illustrated in FIG. 12. Forillustration, the device package 500 includes the carrier 601, and thebackside redistribution layer 604 having conductive features 6041 asshown. In some embodiments, other interconnect structures including, forexample, the conductive vias 609 electrically connected to theconductive features 6041 in the backside RDL 604 is also included. Insome embodiments, an adhesive layer is used to affix the driver die 611Aand the receiver die 611B to the backside RDL 604.

Next, in operation S480, a molding compound 612 is formed in the package500 after the driver die 611A and the receiver die 611B are mounted tothe backside RDL 604 in the opening 610, as illustrated in FIG. 13.

The molding compound 612 is dispensed to fill gaps between the driverdie 611A and the conductive vias 609, gaps between the adjacentconductive vias 609, and gaps between the receiver die 611B and theconductive vias 609. In some embodiments, the molding compound 612includes any suitable material including, for example, an epoxy resin, amolding underfill, or the like. In some embodiments, compressivemolding, transfer molding, and liquid encapsulent molding are suitablemethods for forming molding compound 612, but the present disclosure isnot limited thereto. For example, molding compound 612 is dispensedbetween the driver die 611A, the receiver die 611B and the conductivevias 609 in liquid form. Subsequently, a curing process is performed tosolidify molding compound 612. In some embodiments, the filling ofmolding compound 612 overflows the driver die 611A, the receiver die611B, and conductive vias 609 so that the molding compound 612 coverstop surfaces of the driver die 611A, the receiver die 611B andconductive vias 609.

Next, in operation S490, a grinding and a chemical mechanical polishing(CMP) process are performed to remove excess portions of the moldingcompound 612, and the molding compound 612 is ground back to reduce itsoverall thickness and thus expose conductive vias 609, as illustrated inFIG. 14.

Because the resulting structure includes conductive vias 609 that extendthrough molding compound 612, conductive vias 609 is also referred to asthrough molding vias, through inter vias (TIVs), and the like.Conductive vias 609 provide electrical connections to the backside RDL604 in the package 500. In some embodiments, the thinning process usedto expose the conductive vias 609 is further used to expose conductivepillar 6111A and conductive pillar 6111B.

Next, in operation S500, a patterned polymer layer 613 having openingsis formed overlying the molding compound 612, as illustrated in FIG. 15.

In some embodiments, the polymer layer 613 includes PI, PBO, BCB, epoxy,silicone, acrylates, nano-filled pheno resin, siloxane, a fluorinatedpolymer, polynorbornene, or the like. In some embodiments, the polymerlayer 613 is selectively exposed to an etchant, including, for example,CF₄, CHF₃, C₄F₈, HF, etc., configured to etch the polymer layer 613 toform the openings. As illustratively shown, the openings expose theconductive pillar 6111A and 6111B, and the conductive vias 609. In someembodiments, the openings include one or more via holes, and anoverlying metal wire trench. The via holes vertically extends from abottom surface of the polymer layer 613 to a bottom surface of the metaltrenches, which extend to a top surface of the polymer layer 613.

In some embodiments, the openings are filled with a conductive material,as illustratively shown. For example, a seed layer (not shown) is formedin the openings and the conductive material is plated in the openingsusing an electrochemical plating process, electroless plating process,or the like. The resulting via holes in the polymer layer 613 areelectrically connected to the conductive pillar 6111A, the conductivepillar 6111B or the conductive vias 609, as illustratively shown, andthe lower transmission electrode 106 and the lower receiver electrode110 are formed within the polymer layer 613. In some embodiments, thepolymer layer 613 is patterned to form openings, and a metal material isformed within the openings to form the lower transmission electrode 106and the lower receiver electrode 110. In some embodiments, thetransmission electrode 106 is laterally separated from the receiverelectrode 110 by way of the polymer layer 613. The lower transmissionelectrode 106 and the lower receiver electrode 110 are electricallyconnected to the ground respectively through the conductive vias 609 andthe backside RDL 604. In some embodiments, the conductive material,including, for example, copper, is deposited by way of a depositionprocess, a subsequent plating process, and a CMP process, as describedabove, and thus detailed description is omitted for brevity.

Next, in operation S510, a waveguide dielectric material 614 is formedoverlying the polymer layer 613, as illustrated in FIG. 16. In someembodiments, the waveguide dielectric material 614 includes a higherdielectric constant than the surrounding polymer layers including, forexample, the polymer layer 613 and 616 (shown in FIG. 21). In someembodiments, the waveguide dielectric material 614 is formed by way of avapor deposition technique, including, for example, PVD, CVD, or PECVD,to a thickness that overlies the polymer layer 613. In some embodiments,a grinding and a chemical mechanical polishing (CMP) process are used toremove excess portions of the waveguide dielectric material 614.

In some embodiments, the waveguide dielectric material 614 includesroom-temperature (e.g., 25° C.) liquid-phase high-K polymer, including,for example, PBO, PI, etc. In some other embodiments, the waveguidedielectric material 614 includes room-temperature or low-temperature(e.g., below 250° C.) liquid-phase SiO₂ or Spin on Glass (SOG), of whichthe dielectric constant is greater than or equal to approximately 4. Insome other embodiments, the waveguide dielectric material 614 includesliquid phase SiN_(x) or other high-K dielectric. In some otherembodiments, the waveguide dielectric material 614 includeslow-temperature (e.g., 180° C.) chemical vapor deposited SiO₂(CVD-SiO₂), SiN_(x) or SiO_(x)N_(y) deposition, including, for example,atmospheric pressure CVD (APCVD), sub-atmospheric CVD (SACVD), plasmaenhanced CVD (PECVD), metal organic CVD (MOCVD), etc. In some otherembodiments, the waveguide dielectric material 614 includeslow-temperature (e.g., 210° C.) high-K dielectric deposition including,for example, ZrO₂—Al₂O₃—ZrO₂ (ZAZ) or other High-K dielectric depositionincluding, for example, ZrO₂, Al₂O₃, HfO_(x), HfSiO_(x), ZrTiO_(x),TiO₂, TaO_(x), etc. In some other embodiments, the waveguide dielectricmaterial 614 includes hybrid atomic layer deposited SrO (ALD-SrO) andchemical vapor deposited RuO₂ (CVD-RuO₂). For example, in some otherembodiments, the waveguide dielectric material 614 includes a SrTiO₃(STO) dielectric layer.

The aforementioned materials are given for illustrative purposes.Various materials of the waveguide dielectric material 614 are withinthe contemplated scoped of the present disclosure.

Next, after deposition, the waveguide dielectric material 614 ispatterned to form the dielectric waveguide 101 using photolithographyand/or etching processes. For illustration, in operation S520, apatterned photoresist 605 b is formed over the waveguide dielectricmaterial 614.

Next, portions of photoresist 605 b are exposed using a photo mask (notshown). Exposed or unexposed portions of photoresist 605 b are thenremoved depending on whether a negative or positive resist is used. Theresulting patterned photoresist 605 b includes portions disposed betweenthe transmission electrode 106 and the receiver electrode 110, asillustrated in FIG. 17.

Next, in operation S530, an etching process is performed to remove theexposed portions of the waveguide dielectric material 614, asillustrated in FIG. 18. In some embodiments, the etching processincludes a reactive ion etching (RIE), but the present disclosure is notlimited thereto.

Next, in operation S540, photoresist 605 b is removed, as illustrated inFIG. 19. In some embodiments, a plasma ashing or wet strip process isused to remove photoresist 605 b. In some embodiments, the plasma ashingprocess is followed by a wet dip in a sulfuric acid (H2SO4) solution toclean package 500 and remove remaining photoresist material.

Next, in operation S550, a patterned polymer layer 615 having openingsis formed overlying the polymer layer 613, as illustrated in FIG. 20. Insome embodiments, the polymer layer 615 includes PI, PBO, BCB, epoxy,silicone, acrylates, nano-filled pheno resin, siloxane, a fluorinatedpolymer, polynorbornene, or the like. In some embodiments, the polymerlayer 615 is selectively exposed to an etchant, including, for example,CF₄, CHF₃, C₄F₈, HF, etc., configured to etch the polymer layer 615 toform the openings. In some embodiments, the openings include one or morevia holes, and an overlying metal wire trench. The via holes verticallyextends from a bottom surface of the polymer layer 615 to a bottomsurface of the metal trenches, which extend to a top surface of thepolymer layer 615.

In some embodiments, the openings are filled with a conductive material.For illustration, a seed layer (not shown) is formed in the openings andthe conductive material is plated in the openings using, for example, anelectrochemical plating process, electroless plating process, or thelike. The resulting via holes in the polymer layer 615 are electricallyconnected to the conductive pillar 6111A, the conductive pillar 6111B,or the conductive vias 609, as illustratively shown. In someembodiments, the conductive material, including, for example, copper, isdeposited by way of a deposition process, a subsequent plating process,and a CMP process, as described above, and thus detailed description isomitted for brevity.

In some embodiments, one or more additional polymer layers 616 havingconductive features are formed over the polymer layer 615, asillustrated in FIG. 21. In operation S560, RDLs having conductivefeatures are formed in the polymer layer 616. In some embodiments, theRDLs include conductive features disposed between various polymerlayers. As illustratively shown, the upper transmission electrode 104and the upper receiver electrode 108 are formed within the polymer layer616. In some embodiments, the polymer layer 616 is patterned to formopenings, and a metal material is formed within the openings to form theupper transmission electrode 104 and the upper receiver electrode 108.In some embodiments, the transmission electrode 104 is laterallyseparated from the receiver electrode 108 by way of the polymer layer616.

As illustratively shown, in some embodiments, the driver die 611A andthe receiver die 611B are electrically connected to the uppertransmission electrode 104 and the upper receiver electrode 108respectively via the conductive features in the RDLs. The driver die611A is electrically connected to the upper transmission electrode 104through the conductive pillar 6111A and the conductive vias. Thereceiver die 611B is electrically connected to the upper receiverelectrode 108 through the conductive pillar 6111B and the conductivevias. In some embodiments, the RDLs formed in the polymer layers aresubstantially similar to the backside RDL 604 both in composition andformation process, and thus detailed description is omitted for brevity.

Next, in operation S570, Under Bump Metallurgies (UBMs) 618 are thenformed to electrically connect to the lower transmission electrode 106and the lower receiver electrode 110 through the RDLs in the polymerlayer 616, and a polymer layer 617 is formed over the polymer layer 616,as illustrated in FIG. 22. External connectors 619A and 619B, which areconfigured to be the input/output (I/O) pads, including, for example,solder balls on Under Bump Metallurgies (UBMs) 618 are then formed asillustrated in FIG. 23. In some embodiments, the connectors 619A and619B are ball grid array (BGA) balls, controlled collapse chip connectorbumps, and the like disposed on UBMs 618, which are formed over theRDLs. In some embodiments, the connectors 619A and 619B are used toelectrically connect package 500 to other package components including,for example, another device die, interposers, package substrates,printed circuit boards, a mother board, and the like. In someembodiments, the connector 619A is coupled to a transmission ground, andthe connector 619B is coupled to a receiver ground. Thus, the lowertransmission electrode 106 is coupled to the transmission ground via theconductive vias, RDLs 604 and 616, and the connector 619A. The lowerreceiver electrode 110 is coupled to the receiver ground via theconductive vias, RDLs 604 and 616, and the connector 619A.

Next, the carrier 601 and adhesive layer 602 are removed from thepackage 500. The resulting structure is shown in FIG. 24. In someembodiments, the polymer base layer 603 is left in the resulting package500 as an insulating and protective layer.

The above illustrations include exemplary operations, but the operationsare not necessarily performed in the order shown. Operations may beadded, replaced, changed order, and/or eliminated as appropriate, inaccordance with the spirit and scope of various embodiments of thepresent disclosure.

In some embodiments, a semiconductor structure is disclosed that thesemiconductor structure includes a dielectric waveguide verticallydisposed between a first layer and a second layer, a driver dieconfigured to generate, at a first output node, a driving signal, afirst transmission electrode located along a first side of thedielectric waveguide and configured to receive the driving signal fromthe first output node, a first receiver electrode located along thefirst side of the dielectric waveguide, and a receiver die configured toreceive a received signal from the first receiver electrode.

Also disclosed is a semiconductor structure that includes a dielectricwaveguide having a substantially rectangular cross-sectional disposedbetween a first dielectric material and a second dielectric material, afirst metal layer disposed along a first side of the dielectricwaveguide, and a second metal layer disposed along a second side of thedielectric waveguide. The second dielectric material is disposed on amolding layer, and a driver die and a receiver die are surrounded by themolding layer.

Also disclosed is a method that includes attaching a driver die and areceiver die in a package; applying a molding compound to surround thedriver die and the receiver die; forming a first layer over the driverdie and the receiver die and the molding compound; forming a dielectricwaveguide on the first layer; and forming a second layer on thedielectric waveguide.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor structure, comprising: adielectric waveguide vertically disposed between a first layer and asecond layer; a driver die configured to generate, at a first outputnode, a driving signal; a first transmission electrode located along afirst side of the dielectric waveguide and configured to receive thedriving signal from the first output node; a first receiver electrodelocated along the first side of the dielectric waveguide; a secondreceiver electrode located along a second side of the dielectricwaveguide and electrically coupled to a receiver ground, wherein thefirst receiver electrode and the second receiver electrode are mirrorimages; and a receiver die configured to receive a received signal fromthe first receiver electrode.
 2. The semiconductor structure of claim 1,further comprising: a molding compound surrounding the driver die andthe receiver die on a protection layer, wherein the first layer isdisposed on the molding compound.
 3. The semiconductor structure ofclaim 2, further comprising: a second transmission electrode locatedalong the second side of the dielectric waveguide and electricallycoupled to a transmission ground.
 4. The semiconductor structure ofclaim 3, wherein the first transmission electrode comprises a firstmetal structure disposed over the dielectric waveguide, and the secondtransmission electrode comprises a second metal structure disposed belowthe dielectric waveguide; and wherein the first transmission electrodeand the second transmission electrode are mirror images.
 5. Thesemiconductor structure of claim 1, wherein the first receiver electrodecomprises a first metal structure disposed over the dielectricwaveguide, and the second receiver electrode comprises a second metalstructure disposed below the dielectric waveguide.
 6. The semiconductorstructure of claim 1, wherein the dielectric waveguide comprises adielectric material having a dielectric constant higher than those ofthe first layer and the second layer.
 7. The semiconductor structure ofclaim 1, wherein the dielectric waveguide comprises polyimide orpolybenzoxazole.
 8. The semiconductor structure of claim 1, wherein thedielectric waveguide comprises silicon nitride or silicon dioxide. 9.The semiconductor structure of claim 1, wherein the dielectric waveguidecomprises at least one of ZrO₂, Al₂O₃, HfOx, HfSiOx, ZrTiOx, TiO₂, andTaOx.
 10. The semiconductor structure of claim 1, wherein the dielectricwaveguide comprises a SrTiO₃ dielectric or a ZrO₂—Al₂O₃—ZrO₂ compositedielectric structure.
 11. A semiconductor structure, comprising: adielectric waveguide having a substantially rectangular cross-sectionaldisposed between a first dielectric material and a second dielectricmaterial; a first metal layer disposed along a first side of thedielectric waveguide; and a second metal layer disposed along a secondside of the dielectric waveguide, wherein the second dielectric materialis disposed on a molding layer, and a driver die and a receiver die aresurrounded by the molding layer, wherein a first receiver electrode isdisposed within the first metal layer and coupled to the receiver die, asecond receiver electrode is disposed within the second metal layer andcoupled to a receiver ground, and the first receiver electrode and thesecond receiver electrode are mirror images.
 12. The semiconductorstructure of claim 11, wherein a first transmission electrode isdisposed within the first metal layer, the first transmission electrodeis coupled to the driver die, a second transmission electrode and asecond receiver electrode are is disposed within the second metal layer,and the second transmission electrode is coupled to a transmissionground.
 13. The semiconductor structure of claim 12, wherein a width ofthe dielectric waveguide is tapered from a first width to a second widthin a transition region underlying the first transmission electrode, andthe second width is narrower than the first width.
 14. The semiconductorstructure of claim 11, wherein the dielectric waveguide comprises awaveguide dielectric material having a higher dielectric constant thanthat of the first dielectric material and the second dielectricmaterial.
 15. The semiconductor structure of claim 11, furthercomprising: a first plurality of transmission electrodes disposed withinthe first metal layer above the dielectric waveguide and coupled to aplurality of output nodes of the driver die; and a second plurality oftransmission electrodes disposed within the second metal layer under thedielectric waveguide and coupled to a transmission ground.
 16. A method,comprising: attaching a driver die and a receiver die in a package;applying a molding compound to surround the driver die and the receiverdie; forming a first layer over the driver die, the receiver die, andthe molding compound; forming a dielectric waveguide on the first layer;forming a second layer on the dielectric waveguide; and forming a firstreceiver electrode and a second receiver electrode located along a firstside and a second side of the dielectric waveguide respectively, whereinthe first receiver electrode is formed to be coupled to the receiverdie, and the second receiver electrode is formed to be coupled to areceiver ground, wherein the first receiver electrode and the secondreceiver electrode are mirror images.
 17. The method of claim 16,further comprising: forming a first transmission electrode located alongthe first side of the dielectric waveguide; forming a secondtransmission electrode located along the second side of the dielectricwaveguide and electrically coupled to a transmission ground; and whereinthe driver die comprises an output node configured to provide atransmission signal to the first transmission electrode.
 18. The methodof claim 17, wherein the receiver die is configured to receive areceived signal from the first receiver electrode.
 19. The method ofclaim 18, further comprising: patterning the first layer to form a firstplurality of openings; forming a first metal material within the firstplurality of openings to form the second transmission electrode and thesecond receiver electrode; patterning a waveguide layer overlying thefirst layer to form a dielectric waveguide opening; forming a waveguidedielectric material within the dielectric waveguide opening to form thedielectric waveguide; patterning the second layer overlying thewaveguide layer to form a second plurality of openings; and forming asecond metal material within the second plurality of openings to formthe first transmission electrode and the first receiver electrode. 20.The semiconductor structure of claim 1, wherein the first transmissionelectrode is coupled with the dielectric waveguide at a transitionregion, wherein, in the transition region, a width of the firsttransmission electrode or a width the dielectric waveguide is taperedfrom a first width to a second width.